 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Single Phase Half Controlled Bridges Preliminary Data Sheet VRSM VDSM 500 900 1300 1500 *1700 VRRM VDRM 400 800 1200 1400 *1600 Type PSBZ 50/04 PSBZ 50/08 PSBZ 50/12 PSBZ 50/14 PSBZ 50/16 PSBZ 50 IdAV VRRM = 53 A = 400-1600 V ~ ~ * Delivery on request Symbol IdAV ITSM, IFSM Test Conditions TC = 85 C TVJ = 45C VR = 0 TVJ = TVJM VR = 0 180 sine, per module t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 53 550 600 500 550 1520 1520 1250 1250 150 A A A A A A2 s A2 s As A2 s A/s 2 Features * Package with fast-on terminals * Isolation voltage 3000 V * Planar glasspassivated chips * Low forward voltage drop * UL registered E 148688 Applications * Heat and temperature control for industrial furnaces and chemical processes * Lighting control * Motor control * Power converter i dt 2 TVJ = 45C VR = 0 TVJ = TVJM VR = 0 (di/dt)cr TVJ = TJVM repetitive, IT = 50 A f = 50Hz, tP = 200s VD = 2/3 VDRM IG = 0.3 A non repetitive, IT = 1/2 IdAV diG/dt = 0.3 A/s . 500 1000 10 5 0.5 A/s V/s W W W V C C C V V Nm g (dv/dt)cr PGM PGAVM VRGM TVJ TVJM Tstg VISOL Md Weight TVJ = TVJM VDR = 2/3 VDRM RGK = , method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM tP = 30s tP = 500s Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling capability * High power density Package, style and outline Dimensions in mm (1mm = 0.0394") 10 -40 ... + 125 125 -40 ... + 125 50/60 HZ, RMS IISOL 1 mA Mounting torque typ. t = 1 min t=1s (M5) 2500 3000 2 - 2.5 100 POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2002 POWERSEM reserves the right to change limits, test conditions and dimensions PSBZ 50 Symbol ID, IR VT, VF VTO rT VGT IGT VGD IGD IL IH tgd tq RthJC RthJK dS dA a Test Conditions Characteristic Value 5 1.64 0.85 11 1.5 1.6 100 200 0.2 5 450 200 2 250 0.9 0.225 1.1 0.275 16.1 7.1 50 mA V V m V V mA mA V mA mA mA s s K/W K/W K/W K/W mm mm m/s2 TVJ = TVJM, VR = VRRM, VD = VDRM IT, IF = 80A, TVJ = 25C For power-loss calculations only (TVJ = TVJM) VD = 6V VD = 6V TVJ = TVJM TVJ = TVJM TVJ = 25C TVJ = -40C TVJ = 25C TVJ = -40C VD = 2/3 VDRM VD = 2/3 VDRM TVJ = 25C, tP = 10s IG = 0.45A, diG/dt = 0.45A/s TVJ = 25C, VD = 6V, RGK = TVJ = 25C, VD = 1/2 VDRM IG = 0.45A, diG/dt = 0.45A/s TVJ = TVJM, IT = 20A, tP = 200s, VR = 100V -di/dt = 10A/s, dv/dt = 15V/s, VD = 2/3 VDRM per thyristor/Diode; DC per module per thyristor/Diode; DC per module Creeping distance on surface Creeping distance in air Max. allowable acceleration 200 T [A] 150 1:T VJ = 25C VJ =25C IF(OV) -----IFSM us IFSM (A) TVJ=45C TVJ=150C 550 490 2:T VJ = 125C 100 1.6 1.4 1.2 1 10 100 1 tgd 2 0 VRRM 50 IF 0 0.5 1 1.5 2 VF [V] 1 10 100 I [mA] G 1000 0.8 1/2 VRRM 0.6 0.4 0 10 1 VRRM 1 2 10 t[ms] 10 3 10 Fig. 1 Forward current vs. voltage drop per diode or thyristor Fig. 2 Gate trigger delay time Fig. 3 Surge overload current per diode (or thyristor) IFSM, ITSM: Crest value t: duration POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2002 POWERSEM reserves the right to change limits, test conditions and dimensions PSBZ 50 10 V 1: IGT, TVJ = 125C 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10W 6 70 [A] 60 50 40 DC sin.180 rec.120 rec.60 rec.30 1 30 5 4 VG 20 10 ITAV 0 50 100 TC (C) 150 200 2 1 3 0.1 10 0 10 1 IG 10 2 10 3 mA 10 4 Fig.4 Gate trigger characteristic Fig.5 Maximum forward current at case temperature K/W 1.2 1 0.8 0.6 0.4 0.2 Z thJK Z thJC Z th 0.01 0.1 t[s] 1 10 Fig.6 Transient thermal impedance per thyristor or diode (calculated) 200 [W] 175 150 125 100 75 50 25 PVTOT 0 10 ITAVM 30 DC sin.180 rec.120 rec.60 rec.30 0 50 [A] 1.02 105 110 PSBZ50 80 0.28 0.15 = RTHCA [K/W] 0.4 TC 85 90 95 0.61 100 2.27 115 120 C Tamb 50 100 [K] 150 125 Fig. 7 Power dissipation vs. direct output current and ambient temperature POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2002 POWERSEM reserves the right to change limits, test conditions and dimensions |
Price & Availability of PSBZ50
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |